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06/10/11 www.irf.com 1 hexfet power mosfet s d g AUIRFR4620 97681 v dss 200v r ds(on) typ. 64m max. 78m i d 24a description specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieveextremely low on-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. features advanced process technology ultra low on-resistance dynamic dv/dt rating 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * automotive grade absolute maximum ratings stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ gds gate drain source d-pak AUIRFR4620 symbol parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, v gs @ 10v a i dm pulsed drain current p d @t c = 25c maximum power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance symbol parameter typ. max. units r jc junction-to-case CCC 1.045 r ja junction-to-ambient (pcb mount) CCC 50 r ja junction-to-ambient CCC 110 max. 2417 100144 54 -55 to + 175 20 0.96 113 see fig. 14, 15, 22a, 22b, c/w c 300 downloaded from: http:///

2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. limited by t jmax , starting t j = 25c, l = 1.0mh r g = 25 , i as = 15a, v gs =10v. part not recommended for use above this value . i sd 15a, di/dt 634a/ s, v dd v (br)dss , t j 175c. pulse width 400 s; duty cycle 2%. c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . when mounted on 1" square pcb (fr-4 or g-10 material). for recom mended footprint and soldering techniques refer to application note #an-994.

static electrical @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 200 CCC CCC v v (br)dss / t j breakdown voltage temp. coefficient CCC 0.23 CCC v/c r ds(on) static drain-to-source on-resistance CCC 64 78 m v gs(th) gate threshold voltage 3.0 CCC 5.0 v gfs forward transconductance 37 CCC CCC s r g(int) internal gate resistance CCC 2.6 CCC i dss drain-to-source leakage current CCC CCC 20 CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 gate-to-source reverse leakage CCC CCC -100 dynamic electrical @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units q g total gate charge CCC 25 38 q gs gate-to-source charge CCC 8.2 CCC q gd gate-to-drain ("miller") charge CCC 7.9 CCC q sync total gate charge sync. (q g - q gd ) CCC 17 CCC t d(on) turn-on delay time CCC 13.4 CCC t r rise time CCC 22.4 CCC t d(off) turn-off delay time CCC 25.4 CCC t f fall time CCC 14.8 CCC c iss input capacitance CCC 1710 CCC c oss output capacitance CCC 125 CCC c rss reverse transfer capacitance CCC 30 CCC c oss eff. (er) effective output capacitance (energy related) CCC 113 CCC c oss eff. (tr) effective output capacitance (time related) CCC 317 CCC diode characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 78 CCC t j = 25c v r = 100v, CCC 99 CCC t j = 125c i f = 15a q rr reverse recovery charge CCC 294 CCC t j = 25c di/dt = 100a/ s CCC 432 CCC t j = 125c i rrm reverse recovery current CCC 7.6 CCC a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = 50v, i d = 15a ns nc 24 100 a na nc ns pf a CCC CCC CCC CCC i d = 15a r g = 7.3 v gs = 10v v dd = 130v i d = 15a, v ds =0v, v gs = 10v t j = 25c, i s = 15a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5ma v gs = 10v, i d = 15a v ds = v gs , i d = 100 a v ds = 200v, v gs = 0v v ds = 200v, v gs = 0v, t j = 125c mosfet symbol showing the v ds = 100v conditions v gs = 10v v gs = 0v v ds = 50v ? = 1.0mhz (see fig.5) v gs = 0v, v ds = 0v to 160v (see fig.11) v gs = 0v, v ds = 0v to 160v conditions i d = 15a v gs = 20v v gs = -20v downloaded from: http:///

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% & &'& qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m3 (+/- 400v) ??? aec-q101-002 human body model class h1b (+/- 1000v) ??? aec-q101-001 downloaded from: http:///

4 www.irf.com fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 12v 10v 8.0v 7.0v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 175c 5.0v 2 4 6 8 10 12 14 16 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 15a v gs = 10v 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 160v v ds = 100v vds= 40v i d = 15a downloaded from: http:///

www.irf.com 5 fig 8. maximum safe operating area fig 10. drain-to-source breakdown voltage fig 7. typical source-drain diode forward voltage fig 11. typical c oss stored energy fig 9. maximum drain current vs. case temperature fig 12. maximum avalanche energy vs. draincurrent -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , temperature ( c ) 190 200 210 220 230 240 250 260 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 5ma 1 10 100 1000 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 175c single pulse 100 sec 1msec 10msec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.05a 2.94a bottom 15a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v -50 0 50 100 150 200 v ds, drain-to-source voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 e n e r g y ( j ) 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 25 30 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///

6 www.irf.com fig 13. maximum effective transient thermal impedance, junction-to-case fig 14. typical avalanche current vs.pulsewidth fig 15. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 14, 15:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far inexcess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 16a, 16b.4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 15).t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figures 13) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri ri (c/w) i (sec) 0.456 0.0003110.589 0.003759 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 15a 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) downloaded from: http:///

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* &' -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 100 a i d = 250ua id = 1.0ma id = 1.0a 0 200 400 600 800 1000 di f /dt (a/ s) 200 400 600 800 1000 1200 1400 1600 1800 2000 q r r ( a ) i f = 10a v r = 100v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 200 400 600 800 1000 1200 1400 1600 1800 2000 q r r ( a ) i f = 15a v r = 100v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 10 20 30 40 50 60 70 80 90 i r r m ( a ) i f = 10a v r = 100v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/ s) 0 10 20 30 40 50 60 70 80 90 i r r m ( a ) i f = 15a v r = 100v t j = 25c t j = 125c downloaded from: http:///

8 www.irf.com fig 23a. switching time test circuit fig 23b. switching time waveforms fig 22b. unclamped inductive waveforms fig 22a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs fig 24a. gate charge test circuit fig 24b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 21. +,-
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period .
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d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - v ds 90%10% v gs t d(on) t r t d(off) t f ( ) 1 * % 0.1 % "#"" $ + - downloaded from: http:///

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note: for the most current drawing please refer to ir website at http://www.irf.com/package/ !" #### - /0/ 1101,1, 0'234 +5 3& 3 downloaded from: http:///

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tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch note: for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///

www.irf.com 11 ordering information base part number package type standard pack complete part number form quantity AUIRFR4620 dpak tube 75 AUIRFR4620 tape and reel 2000 AUIRFR4620tr tape and reel left 3000 AUIRFR4620trl tape and reel right 3000 AUIRFR4620trr downloaded from: http:///

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unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or service voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive business practice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any suchunintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product.ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military - grade meet military specifications. buyers acknowledge and agree that any such use of ir products which ir has notdesignated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

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